Paper
22 April 1987 Infrared-Wavelength Modulation Spectra Of InGaAs Grown By MBE And LPE
T. W. Nee, T. L. Cole, A. K. Green, M. E. Hills, C. K. Lowe-Ma, Victor Rehn
Author Affiliations +
Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940905
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We present the infrared wavelength-modulation spectra of molecular-beam-epitaxy- (MBE) and liquid-phase-epitaxy- (LPE) grown Ini_xGaxAs (0.45 < x < 0.50) epilayers on (100) InP substrates. The transmittance, reflectance, and their wavelength derivatives are measured in the neighborhood of the band gap at room temperature. The dependence of band gap on strain is presented and analyzed. It is shown that epilayers partially relax the interfacial strain according to their thickness, giving different dependences of band gap on alloy composition. The results are analyzed by introducing a normalized fractional-strain parameter and applying Hooke's-law elasticity and deformation potential theories.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. W. Nee, T. L. Cole, A. K. Green, M. E. Hills, C. K. Lowe-Ma, and Victor Rehn "Infrared-Wavelength Modulation Spectra Of InGaAs Grown By MBE And LPE", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940905
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Cited by 2 scholarly publications.
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KEYWORDS
Liquid phase epitaxy

Semiconductors

Modulation

Indium gallium arsenide

Sensors

Adaptive optics

Gallium

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