22 April 1987 Infrared-Wavelength Modulation Spectra Of InGaAs Grown By MBE And LPE
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940905
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We present the infrared wavelength-modulation spectra of molecular-beam-epitaxy- (MBE) and liquid-phase-epitaxy- (LPE) grown Ini_xGaxAs (0.45 < x < 0.50) epilayers on (100) InP substrates. The transmittance, reflectance, and their wavelength derivatives are measured in the neighborhood of the band gap at room temperature. The dependence of band gap on strain is presented and analyzed. It is shown that epilayers partially relax the interfacial strain according to their thickness, giving different dependences of band gap on alloy composition. The results are analyzed by introducing a normalized fractional-strain parameter and applying Hooke's-law elasticity and deformation potential theories.
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T. W. Nee, T. L. Cole, A. K. Green, M. E. Hills, C. K. Lowe-Ma, Victor Rehn, "Infrared-Wavelength Modulation Spectra Of InGaAs Grown By MBE And LPE", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940905; https://doi.org/10.1117/12.940905
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