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22 April 1987 Non-Destructive Characterization Of Carrier Concentration And Thickness Uniformity For Semiconductors Using Infrared Reflectance Spectroscopy
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940919
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Infrared reflectance spectroscopy, in the range of 4000 to 250 cm-1, has been used to non-destructively characterize the carrier concentration and thickness of n-type epitaxial GaN and AlGai_xAs and S-doped bulk InP. Measurements of carrier concentration and thickness uncertain to 2-4% and 2 % are typical and relative differences of 2 and 1% respectively can be observed from different areas of the sample. This reflectance tool is sensitive to carrier concentrations above about 1 x 1017cm-for the semicondu9tors studied here and is estimated to be sensitive to concentrations in the low 10 cm range for the heavier III-V's, e.g., GaSb and InSb. A by-product of these measurements has been the improvement of an organometallic vapor phase epitaxy system with minimal interruption to the growth program because of the quick turn-around time of this technique.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. K. Gaskill, J. Davis, R. S. Sillmon, and M. Sydor "Non-Destructive Characterization Of Carrier Concentration And Thickness Uniformity For Semiconductors Using Infrared Reflectance Spectroscopy", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940919
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