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22 April 1987 Optical Characterization Of GaAs/AlxGai-xAs Quantum Well Structures And Superlattices By Photoluminescence And Photoexcitation Spectroscopy.
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940892
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We present (I) low temperature excitation-wavelength-dependent photoluminescence studies in GaAs/AlxGai-xAs quantum well structures, which reveal the well thickness variations along the MBE growth direction, and (II) the photoluminescence excitation spectroscopy work carried out in the region of unconfined transitions with a series of GaAs/AlxGal-xAs superlattices which have a fixed well size and aluminum concentration in the barrier. We have found that the changes in the barrier widths of the superlattice samples can drastically affect the strengths and energies of the unconfined transitions.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. J. Song, Y. S. Yoon, P. S. Jung, A. Fedotowsky, and Y. B. Kim "Optical Characterization Of GaAs/AlxGai-xAs Quantum Well Structures And Superlattices By Photoluminescence And Photoexcitation Spectroscopy.", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940892
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