22 April 1987 Optical Characterization Of Monocrystalline Silicon Carbide Thin Films
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940912
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
High-quality monocrystalline beta-SiC thin films were grown via two-step process of conversion of the Si(1002) surface by reaction with C2H4 and the subsequent chemical vapor deposition (CVD) at 1360 C and 1 atm total pressure. Four dopants, B and Al for p-type and N and P for n-type, were also incorporated into monocrystalline beta-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped beta-SiC thin films and to investigate the effects of dopants on the structure of the doped beta-SiC thin films. The changes in the shapes of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples. The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at 850cm71 respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. J. Kim, H. J. Kim, R. F. Davis, R. F. Davis, } "Optical Characterization Of Monocrystalline Silicon Carbide Thin Films", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940912; https://doi.org/10.1117/12.940912
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