Optical Characterization Of Single Quantum Wells Fabricated Under Conditions Of Interrupted Growth

B. S. Elman; Emil S. Koteles; C. Jagannath; Y. J. Chen; S. Charbonneau; M. L.W. Thewalt

doi:10.1117/12.940890

22 April 1987 Optical Characterization Of Single Quantum Wells Fabricated Under Conditions Of Interrupted Growth

B. S. Elman, Emil S. Koteles, C. Jagannath, Y. J. Chen, S. Charbonneau, M. L.W. Thewalt

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940890
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Multiple peaks, recently observed in the low temperature photoluminescence (PL) spectra of GaAs/AlGaAs single quantum wells fabricated by momentarily interrupting the molecular beam epitaxial growth between adjacent but different semiconductor layers, have been interpreted as originating within smooth regions in the quantum well layer differing in width by exactly one monolayer. We have observed similar structure in similarly grown samples but find that low temperature PL can be misleading. However, higher temperature PL or PL excitation spectroscopy do provide unambiguous evidence for the model of interface smoothing due to growth interruption. Further, time-resolved spectra yield decay times of the individual peaks which are consistent with this interpretation.

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B. S. Elman, Emil S. Koteles, C. Jagannath, Y. J. Chen, S. Charbonneau, and M. L.W. Thewalt "Optical Characterization Of Single Quantum Wells Fabricated Under Conditions Of Interrupted Growth", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940890

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