22 April 1987 Photoreflectance Characterization Of Microstructures Using A Dye Laser System
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940895
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The optical characterization technique of photoreflectance (PR) has been modified by replacing the source of the probe light with a dye laser. This has allowed easy access to temperatures below 100K, a temperature range in which it was previously difficult to measure a PR spectrum. This system is also capable of simultaneous photoluminescence excitation spectroscopy (PLE). The combined PR/PLE apparatus has allowed us to obtain information regarding the nature of the PR signal.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. J. Glembocki, O. J. Glembocki, B. V. Shanabrook, B. V. Shanabrook, } "Photoreflectance Characterization Of Microstructures Using A Dye Laser System", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940895; https://doi.org/10.1117/12.940895
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