22 April 1987 Raman And Optical Spectroscopy Of Nanocrystalline Silicon Films
Author Affiliations +
Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940911
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The characterization of plasma-assisted CVD thin films of nanocrystalline (nc)-silicon using Raman and optical spectroscopy, is described. Characteristic variations of the frequency and linewidth of the Γ25, Raman-active mode of silicon occur due to phonon localization in the quasi-isolated crystallites. In addition, a grain-boundary mode and variable Raman and elastic scattering intensity enhancement at the grain boundary regions, have been observed. The light scattering enhancement scales very well, as a function of average crystallite size and compressive stress in the films, with the optical absorption coefficient and the intensity of the x-ray diffraction component attributed to the expanded grain boundary regions. The finite crystallite size effect in nc-silicon is compared briefly with Raman results on semiconducting, nc-selenium particles.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Iqbal, Z. Iqbal, S. Veprek, S. Veprek, } "Raman And Optical Spectroscopy Of Nanocrystalline Silicon Films", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940911; https://doi.org/10.1117/12.940911
PROCEEDINGS
4 PAGES


SHARE
Back to Top