22 April 1987 Raman And Optical Spectroscopy Of Nanocrystalline Silicon Films
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940911
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The characterization of plasma-assisted CVD thin films of nanocrystalline (nc)-silicon using Raman and optical spectroscopy, is described. Characteristic variations of the frequency and linewidth of the Γ25, Raman-active mode of silicon occur due to phonon localization in the quasi-isolated crystallites. In addition, a grain-boundary mode and variable Raman and elastic scattering intensity enhancement at the grain boundary regions, have been observed. The light scattering enhancement scales very well, as a function of average crystallite size and compressive stress in the films, with the optical absorption coefficient and the intensity of the x-ray diffraction component attributed to the expanded grain boundary regions. The finite crystallite size effect in nc-silicon is compared briefly with Raman results on semiconducting, nc-selenium particles.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Iqbal, Z. Iqbal, S. Veprek, S. Veprek, "Raman And Optical Spectroscopy Of Nanocrystalline Silicon Films", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940911; https://doi.org/10.1117/12.940911
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