22 April 1987 Raman Scattering For Semiconductor Interface Analysis
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940910
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The applications of Raman spectroscopy to study semiconductor interfaces and the initial phases of interface formation is described. The limitations of weak signal from interface structures has proved a severe limitation, but it has recently been shown that multi-layered thin film structures can be made which utilyze optical interference properties to enhance the Raman scattering from thin films and thin film interfaces. This technique (termed IERS) has been applied to study several metal-Silicon interfaces. An even more difficult problem is the study of interface formation during ultra high vacuum (UHV) deposition on atomically clean surfaces. The experimental considerations from in situ UHV Raman scattering will be described. The results of Raman scattering for the interface of Pd deposited on crystalline and amorphous Si are presented. Both the IERS and in situ UHV measurements are used to explore the mechanisms of silicide formation.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. J. Nemanich, R. J. Nemanich, } "Raman Scattering For Semiconductor Interface Analysis", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940910; https://doi.org/10.1117/12.940910
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