22 April 1987 Raman Scattering From Semiconductor Thin Films
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940909
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The use of Raman spectroscopy to characterize thin silicon films formed by laser recrystallization using different capping layers, thin silicon films formed by plasma deposition, and thin films of tungsten silicide formed by rapid thermal annealing is reported.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Howard E. Jackson, Howard E. Jackson, Joseph T. Boyd, Joseph T. Boyd, Samhita Dasgupta, Samhita Dasgupta, Hsindao E. Lu, Hsindao E. Lu, Thomas D. Mantei, Thomas D. Mantei, } "Raman Scattering From Semiconductor Thin Films", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940909; https://doi.org/10.1117/12.940909
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