22 April 1987 Scanning Photoluminescence
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940886
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
This paper reports on a computer-controlled system which has been designed for mapping photoluminescence (PL) intensities of GaAs wafers or epitaxial layers up to 3 inches in diameter. In this instrument, the excitation source may be moved at right angles to the sample surface without any change in the collection efficiency of the PL light. The PL intensities are measured at 2 mm intervals to reveal the homogeneity of the surface. Possible operating temperatures range from 4K to room temperature. The effectiveness of the system is demonstrated on Liquid-Encapsulated Czochralski (LEC), Horizontal Bridgman (HB) and epitaxial GaAs samples. This PL scanning technique shows the intensity variation in these samples to be closely related to the defect density distribution.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. K. Riemer, T. G. Stoebe, A. Azim Khan, "Scanning Photoluminescence", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940886; https://doi.org/10.1117/12.940886
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