22 April 1987 Study Of GaAs/AlGaAs And InGaAs/GaAs Multiple Quantum Wells Grown On Non-Polar Substrates By Photoreflectance
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940901
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We have studied for the first time the optical properties of GaAs/AlxGa1-xAsAs multiple quantum wells (MQWs) grown on Si and Ge substrates and InyGai-yAs/GaAs strained layer MQWs grown on Si substrates by photoreflectance. These preliminary results show that good quality epilayers from different semiconductors can be grown on non-polar substrates indicating the possibility of new device materials besides their importance in fundamental research. The experimental data were compared with calculations based on envelope-function approximation and fit to third-derivative functional form of reflectance modulation theory.
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U. K. Reddy, G. Ji, R. Houdre, H. Unlu, D. Huang, H. Morkoc, "Study Of GaAs/AlGaAs And InGaAs/GaAs Multiple Quantum Wells Grown On Non-Polar Substrates By Photoreflectance", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940901; https://doi.org/10.1117/12.940901
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