22 April 1987 Study Of GaAs/AlGaAs And InGaAs/GaAs Multiple Quantum Wells Grown On Non-Polar Substrates By Photoreflectance
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940901
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We have studied for the first time the optical properties of GaAs/AlxGa1-xAsAs multiple quantum wells (MQWs) grown on Si and Ge substrates and InyGai-yAs/GaAs strained layer MQWs grown on Si substrates by photoreflectance. These preliminary results show that good quality epilayers from different semiconductors can be grown on non-polar substrates indicating the possibility of new device materials besides their importance in fundamental research. The experimental data were compared with calculations based on envelope-function approximation and fit to third-derivative functional form of reflectance modulation theory.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
U. K. Reddy, U. K. Reddy, G. Ji, G. Ji, R. Houdre, R. Houdre, H. Unlu, H. Unlu, D. Huang, D. Huang, H. Morkoc, H. Morkoc, } "Study Of GaAs/AlGaAs And InGaAs/GaAs Multiple Quantum Wells Grown On Non-Polar Substrates By Photoreflectance", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940901; https://doi.org/10.1117/12.940901
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