Paper
22 April 1987 Use Of Photoluminescence Spectroscopy To Characterize The Crystalline Quality Of Cdte Films Grown By A Modified Csvt Technique
J. G. Mendoza-Alvarez, F. Sanchez-Sinencio, O. Zelaya, J. Gonzalez-Hernandez, M. Cardenas, S. S. Chao
Author Affiliations +
Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940889
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We have employed photoluminescence measurements at 10-300°K to study the effects of deposition parame-ters, surfaces preparation and heat treatment on the properties of CdTe polycristalline thin films. The films were grown using a modified hot wall close spaced vapor transport system. We found strong differences in the photoluminescence spectra of samples grown under different conditions. Heat treatments in the as-grown samples increase the average particle size and reduce the native defect density.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. G. Mendoza-Alvarez, F. Sanchez-Sinencio, O. Zelaya, J. Gonzalez-Hernandez, M. Cardenas, and S. S. Chao "Use Of Photoluminescence Spectroscopy To Characterize The Crystalline Quality Of Cdte Films Grown By A Modified Csvt Technique", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940889
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KEYWORDS
Thin films

Luminescence

Crystals

Excitons

Annealing

Semiconductors

Transmission electron microscopy

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