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2 February 1988 Analysis Of High Speed GaAs ICs With Electro-Optic Probes
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Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940953
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We describe the use of electro-optic probes for the characterization of GaAs ICs. The use of various methods of electro-optic probing for measuring on-chip waveforms is discussed, as are the principal features, and the major advantages and disadvantages of each method. Details of the back-side electro-optic probe are discussed, and representative examples illustrating its utility and limitations for the analysis of high-speed ICs are discussed. New methods of probing are proposed, and a few downstream applications are outlined.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
X. C. Zhang and R. K. Jain "Analysis Of High Speed GaAs ICs With Electro-Optic Probes", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940953
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