2 February 1988 Characterization Of Logic Devices With Photoconductively Generated Picosecond Pulses
Author Affiliations +
Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940947
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Photoconductive picosecond electrical pulse generators and photoconductive sampling gates are ideally suited to the characterization of high speed logic devices, particularly silicon devices, and of VLSI wiring structures. We review in this paper the fabrication of photoconductive switches compatible with the silicon device technologies and some of their applications to the characterization of high speed devices.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Halbouti, J. M. Halbouti, P. G. May, P. G. May, M. B. Ketchen, M. B. Ketchen, } "Characterization Of Logic Devices With Photoconductively Generated Picosecond Pulses", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940947; https://doi.org/10.1117/12.940947
PROCEEDINGS
9 PAGES


SHARE
Back to Top