2 February 1988 Electro-Optic Sampling In Gallium Arsenide
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Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940952
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Electro-optic sampling uses short optical pulses to measure high-speed electrical waveforms propagating in electro-optic crystals. Since GaAs is electro-optic, a perfect application of this technique is the noninvasive probing of signals propagating in devices and circuits made in this and related compound semiconductors. Principles, limitations and applications to high-speed circuit characterization will be discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian H. Kolner, Brian H. Kolner, } "Electro-Optic Sampling In Gallium Arsenide", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940952; https://doi.org/10.1117/12.940952
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