2 February 1988 Electro-Optic Sampling Using Injection Lasers
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Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940985
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The measurement of electrical waveforms from high-speed electronic and optoelectronic devices using electro-optic sampling in GaAs is described. In addition, a discussion of non-invasive sampling of waveforms internal to integrated circuits fabricated on III-V materials is presented. The sources of ultrashort optical pulses for these measurements are InGaAsP injection lasers which are either modelocked or gain-switched. Temporal resolution as low as 12 ps and sensitivity of 1.5 mV/ Hz have been obtained. The system is simple and compact.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Wiesenfeld, A. J. Taylor, R. S. Tucker, G. Eisenstein, C. A. Burrus, "Electro-Optic Sampling Using Injection Lasers", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940985; https://doi.org/10.1117/12.940985
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