2 February 1988 Electro-Optic Sampling Using Injection Lasers
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Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940985
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The measurement of electrical waveforms from high-speed electronic and optoelectronic devices using electro-optic sampling in GaAs is described. In addition, a discussion of non-invasive sampling of waveforms internal to integrated circuits fabricated on III-V materials is presented. The sources of ultrashort optical pulses for these measurements are InGaAsP injection lasers which are either modelocked or gain-switched. Temporal resolution as low as 12 ps and sensitivity of 1.5 mV/ Hz have been obtained. The system is simple and compact.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Wiesenfeld, J. M. Wiesenfeld, A. J. Taylor, A. J. Taylor, R. S. Tucker, R. S. Tucker, G. Eisenstein, G. Eisenstein, C. A. Burrus, C. A. Burrus, } "Electro-Optic Sampling Using Injection Lasers", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940985; https://doi.org/10.1117/12.940985
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