High Performance Silicon Bipolar Technology

G. P. Li; M. B. Ketchen

doi:10.1117/12.940933

2 February 1988 High Performance Silicon Bipolar Technology

G. P. Li, M. B. Ketchen

Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940933
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

For over two decades silicon bipolar technology has been the dominant high performance technology for commercial IC applications. While alternative technologies such as GaAs and Josephson have demonstrated performance superior to silicon bipolar, silicon bipolar is itself presently on a very steep learning curve with ECL performance of under 100ps demonstrated at a number of laboratories around the world(1-8). Recently ECL speeds under 50 ps have been demonstrated (9) and projections to 25 ps and below will undoubtedly be realized in the near future. Corresponding simple inventor delays of under 10 ps and base transit times of under 5 ps will require new techniques for measurement and characterization.

Citation Download Citation

G. P. Li and M. B. Ketchen "High Performance Silicon Bipolar Technology", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940933

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available