2 February 1988 Photoconductor Pulse Generators And Sampling Gates For Characterization Of High-Speed Devices And Transmission Lines
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Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940976
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We describe photoconductive semiconductor devices developed for application in diagnostics of high-speed electronic devices and circuits. Both pulse generation and sampling functions are provided by these ultrafast photoconductors. The photoresponse of different semiconductor materials (GaAs, InP, Si) that have been ion bombarded (Ar, H, He, Ne, 0, Si) was investigated and characterized. Response times as short as 1 picosecond have been observed. High frequency propagation characteristics of microstrip and coplanar waveguide transmission lines have been studied and modelled. Application of this measurement technique to the characterization of a microwave GaAs transistor is presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicholas G. Paulter, Robert B. Hammond, "Photoconductor Pulse Generators And Sampling Gates For Characterization Of High-Speed Devices And Transmission Lines", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940976; https://doi.org/10.1117/12.940976
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