2 February 1988 Photoelectron Scanning Electron Microscope (PSEM) For High Speed Noncontact Testing
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Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940943
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The electron emitter in a conventional SEM is replaced by a pulsed laser/photocathode combination, resulting in a source producing electron pulses of order 1 ps in duration at a 100 Mhz repetition rate and with a peak brightness of 3 10' A/cm2.steradian. By using this instrument in the voltage contrast mode, without contact with the samples, we have been able to measure electrical pulses propagating on coplanar transmission lines with a temporal resolution of 5 ps, a voltage resolution of 3 mV/(Hz)1/2 and a spatial resolution of 0.1 Am. These measurements are achieved with extraction fields above the sample of about 1 kV/mm.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. May, P. May, J. M. Halbout, J. M. Halbout, G. Chiu, G. Chiu, } "Photoelectron Scanning Electron Microscope (PSEM) For High Speed Noncontact Testing", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940943; https://doi.org/10.1117/12.940943
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