2 February 1988 Picosecond Photoconductive Sampling Measurements Of The Scattering Parameters Of High Speed Field Effect Transistors
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Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940977
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We describe stimulus-response measurement techniques based on the photoconductive generation and sampling of picosecond electrical pulses for measuring the high frequency scattering parameters of high speed microwave devices. We compare these techniques with more conventional microwave diagnostic techniques.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven C. Moss, Duane D. Smith, Donald E. Cooper, "Picosecond Photoconductive Sampling Measurements Of The Scattering Parameters Of High Speed Field Effect Transistors", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940977; https://doi.org/10.1117/12.940977
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