20 April 1987 Anisotropic Growth Processes On GaAs(100) And Ge(100)
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940991
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
We have used reflection high energy electron diffraction (RHEED) to follow the growth of GaAs on misoriented GaAs(100), using molecular beam epitaxy (MBE). We find anisotropies in the step order, kink density and the growth oscillations as a function of substrate misorientation and direction of surface misorientation. For comparison in a simple system, growth of Ge on Ge(100) is also followed. On the singular Ge(100) surface, we observe strong RHEED oscillations accompanied by a strong anisotropy in the nucleation of the islands during growth. These islands show up as long intersecting streaks in the diffraction pattern when the electron beam is incident along the [010] direction. In the presence of As4, these anisotropic features become more striking and stronger RHEED oscillations are observed over a wider temperature range.
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P. R. Pukite, P. R. Pukite, S. Batra, S. Batra, P. I. Cohen, P. I. Cohen, } "Anisotropic Growth Processes On GaAs(100) And Ge(100)", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940991; https://doi.org/10.1117/12.940991

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