20 April 1987 Crystal Growth Of p-ZnSe And ZnSe p-n Junctions
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940998
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Low-resistive and stable p-type ZnSe crystal can be grown by the temperature difference method under controlled vapor pressure (TDM-CVP) of Zn in the solution of Se. The properties of a p-ZnSe crystal grown under optimum Zn pressure, which was about 7.2 atm at the growth temperature of 1050°C, show best value resulting in the suppression of the nonstoichiometric point defects. As a result, a p-n junction can be formed by the Ga diffusion under the control of Se pressure in the p-type ZnSe crystal and a high efficiency pure blue LED can be realized.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun-ichi Nishizawa, Jun-ichi Nishizawa, Yasuo Okuno, Yasuo Okuno, } "Crystal Growth Of p-ZnSe And ZnSe p-n Junctions", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940998; https://doi.org/10.1117/12.940998
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