20 April 1987 Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941015
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
This paper reports some new experimental results concerning InP epitaxy by LP-MOCVD using chemical angle polishing and a sensitive etching technique to characterize the defect morphology of the complete InP layer, interface and substrate. The distribution of defects is associated with the SIMS determined As and Ga content.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. M. Huber, A. M. Huber, J. di Persio, J. di Persio, M. A. di Forte-Poisson, M. A. di Forte-Poisson, C. Brylinski, C. Brylinski, R. Bisaro, R. Bisaro, C. Grattepain, C. Grattepain, O. Lagorsse, O. Lagorsse, "Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941015; https://doi.org/10.1117/12.941015


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