Gas Phase Chemistry And Transport Phenomena In MOCVD Reactors

Klavs F. Jensen; Dimitrios I. Fotiadis; Peter W. Lee; Donald R. McKenna; Harry K. Moffat

doi:10.1117/12.941011

20 April 1987 Gas Phase Chemistry And Transport Phenomena In MOCVD Reactors

Klavs F. Jensen, Dimitrios I. Fotiadis, Peter W. Lee, Donald R. McKenna, Harry K. Moffat

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941011
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Gas phase chemistry and transport phenomena in MOCVD are addressed. A new MOCVD reactor arrangement for exploring the gas phase chemistry by in situ molecular beam mass spectrometry is presented along with pyrolysis data for Ga(CH3)3, Ga(C2H5)3 and As(CH3)3. Detailed two- and three-dimensional models of the classical horizontal and vertical MOCVD reactor configurations are described. These models provide new insight into flow, heat and mass transfer effects on film thickness uniformity and interface abruptness. For the horizontal reactor, model simulations demonstrate the existence of longitudinal buoyancy driven convection rolls which adversely affect film thickness uniformity. For the vertical reactor, the film thickness uniformity is shown to be strongly influenced by susceptor edge, reactor wall, and buoyancy effects. It is demonstrated that uniformity may be improved by shaping the reactor wall and rotating the susceptor. The existence of multiple steady flows in certain operating regions is illustrated. Concentration transients in the growth of heterojunctions are simulated and it is shown that the presence of recirculation cells widens the interface depth.

Citation Download Citation

Klavs F. Jensen, Dimitrios I. Fotiadis, Peter W. Lee, Donald R. McKenna, and Harry K. Moffat "Gas Phase Chemistry And Transport Phenomena In MOCVD Reactors", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941011

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