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20 April 1987 Identification Of Substitutional Acceptors In Bridgman-Grown (Cd,Mn)Te
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987)
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Intentionally doped Cd1-xMnxTe crystals with composition 0.1 < x < 0.3 were grown by the vertical Bridgman technique. Systematic studies were made of: (a) interaction of native defects with foreign impurities; (b) the mechanisms for substitutional doping of the accep-tors Cu, Au, P and As; and (c) the binding energies of various defects. The measurements involve a combination of crystallographic, electrical and optical studies. The results demonstrated that P and As play the role of effective acceptors. In Cu and Au doped samples, a high compensation mechanism was observed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Becla, D. Heiman, J. Misiewicz, P. A. Wolff, and D. Kaiser "Identification Of Substitutional Acceptors In Bridgman-Grown (Cd,Mn)Te", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987);

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