20 April 1987 MBE Of ZnSe On GaAs Epilayers
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941003
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The heteroepitaxial growth of ZnSe on GaAs epilayers grown by molecular beam epitaxy is found to occur via a two-dimensional growth mechanism. Alternatively, nucleation on a GaAs substrate exhibits three dimensional growth characteristics. The differentiation of the type of nucleation is evidenced by reflection high energy electron diffraction intensity oscillations, as well as the dynamic behavior of the diffraction patterns. Photoluminescence measurements of pseudomorphic ZnSe epilayers grown on GaAs epilayers provides a direct measurement of ZnSe deformation potentials.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. A. Kolodziejski, R. L. Gunshor, M. R. Melloch, M. Vaziri, C. Choi, N. Otsuka, "MBE Of ZnSe On GaAs Epilayers", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941003; https://doi.org/10.1117/12.941003
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