20 April 1987 Molecular Beam Epitaxy Growth And Characterization Of Lattice Matched And Strained Channel InxGa1-XAs/InyAl1-yAs Modulation Doped Stuctures On InP
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940995
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We prepared by molecular beam epitaxy (MBE) InGaAs/InAlAs MODFET structures with In compositions of the InGaAs channel ranging from 0.53 (matched) to 0.70 (mismatched). The mismatched InGaAs channel was obtained by grading. The growth temperature for the lattice matched In0.53Ga0.47As layer was fixed at 510°C, while that for the graded InGaAs layer was lowered for the higher In mole fractions. The substrate temperature for the In0.52A10.48As layer varied from 500°C to 550°C, as governed by the device application. The In0.52A10.48As layers grown above 540°C show higher mobilities, little persistent photoconductivity (PPC) effect and lead to better device performance. Layers with a graded InxGa1-xAs channel (x > 0.53) have higher mobilities and carrier concentrations than those with a matched channel (x = 0.53). MODFET devices were fabricated with 1 μm gate lengths. Transconductance improved from 142 to 197 mS/mm on normal structures and from 119 to 170 mS/mm on inverted structures when the In mole fraction of the channel was increased from 53 to 65%.
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C. K. Peng, C. K. Peng, A. Ketterson, A. Ketterson, H. Morkoc, H. Morkoc, "Molecular Beam Epitaxy Growth And Characterization Of Lattice Matched And Strained Channel InxGa1-XAs/InyAl1-yAs Modulation Doped Stuctures On InP", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940995; https://doi.org/10.1117/12.940995
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