20 April 1987 Photoassisted Mbe: A New Approach To Substitutional Doping
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940997
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Photoassisted molecular beam epitaxy (MBE), in which the substrate is illuminated during film growth, is being employed in a new approach to controlled substitutional doping of II-VI compound semiconductors. Substitutional doping of these materials has been a long standing problem which has severely limited their applications potential. The photoassisted MBE technique gives rise to dramatic changes in the electrical properties of as-grown epilayers. In particular, highly conducting n-type and p-type CdTe films have been grown using indium and antimony as n-type and p-type dopants, respectively. Double-crystal x-ray rocking curve data indicate that the doped epilayers are of high structural quality. Successful n-type doping of CdMnTe, a dilute magnetic semiconductor, with indium has also been achieved. Most recently, the photoassisted growth technique has been employed to prepare doped CdMnTe-CdTe quantum well structures and superlattices.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. F. Schetzina, J. F. Schetzina, R. N. Bicknell, R. N. Bicknell, N. C. Giles, N. C. Giles, R. L. Harper, R. L. Harper, } "Photoassisted Mbe: A New Approach To Substitutional Doping", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940997; https://doi.org/10.1117/12.940997
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