Translator Disclaimer
20 April 1987 Photoassisted Mbe: A New Approach To Substitutional Doping
Author Affiliations +
Proceedings Volume 0796, Growth of Compound Semiconductors; (1987)
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Photoassisted molecular beam epitaxy (MBE), in which the substrate is illuminated during film growth, is being employed in a new approach to controlled substitutional doping of II-VI compound semiconductors. Substitutional doping of these materials has been a long standing problem which has severely limited their applications potential. The photoassisted MBE technique gives rise to dramatic changes in the electrical properties of as-grown epilayers. In particular, highly conducting n-type and p-type CdTe films have been grown using indium and antimony as n-type and p-type dopants, respectively. Double-crystal x-ray rocking curve data indicate that the doped epilayers are of high structural quality. Successful n-type doping of CdMnTe, a dilute magnetic semiconductor, with indium has also been achieved. Most recently, the photoassisted growth technique has been employed to prepare doped CdMnTe-CdTe quantum well structures and superlattices.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. F. Schetzina, R. N. Bicknell, N. C. Giles, and R. L. Harper "Photoassisted Mbe: A New Approach To Substitutional Doping", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987);

Back to Top