20 April 1987 Photoreflectance Spectra Of AlxGa1-xAs
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940994
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
The PR spectra of AlxGa1-xAs with different x values (0<x<0.46) were studied. It is demonstrated that PR can be an extremely useful technique in the alloy examination, especially the composition determination, by comparing the PR and the low temperature absorption spectra. The impurity band observed in PR spectra is also discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Huang, D. Huang, G. Ji, G. Ji, U. K. Reddy, U. K. Reddy, H. Morkoc, H. Morkoc, "Photoreflectance Spectra Of AlxGa1-xAs", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940994; https://doi.org/10.1117/12.940994

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