20 April 1987 RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941010
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Reflection high-energy electron diffraction (RHEED) intensity dynamics has been widely accepted as a sensitive, in-situ, real time monitor of the surface morphology during the molecular beam epitaxial (MBE) growth. In this paper we focus on the behavior of the specular beam intensity as a function of the growth conditions (substrate temperature, arsenic pressure and growth rate) as well as diffraction conditions (incident angle of the electron beam, azimuthal angle) for both static (i.e., no growth) and dynamic (i.e., during growth) AlxGa1-xAs (100) (0 < x <1) surfaces. The kinetic processes underlying these observations are discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Chen, P. Chen, T. C. Lee, T. C. Lee, N. M. Cho, N. M. Cho, A. Madhukar, A. Madhukar, } "RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941010; https://doi.org/10.1117/12.941010
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