20 April 1987 Study And Characterization Of Low-Pressure AsH3 Cracking Cells In Gas Source MBE: Growth Of GaAs And AlGaAs Epitaxy
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Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940993
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
MBE growth of GaAs and AlGaAs layers with good surface morphology and reasonably good PL spectral response has been achieved using two versions of a low-pressure, Calawa-type AsH3 cracker (long-quartz-tube containing a filamentary Ta catalyst) which produced predomi-nately As4 and As2 and smaller concentrations of As1 for the MBE growth. Quadruple mass analyzer measurements of the cracking patterns and the As4, As2, and As1 molecular species produced by the gas cracking furnaces are also reported.
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C. w. Litton, C. w. Litton, L. W. Kapitan, L. W. Kapitan, P. W. Yu, P. W. Yu, D. C. Look, D. C. Look, } "Study And Characterization Of Low-Pressure AsH3 Cracking Cells In Gas Source MBE: Growth Of GaAs And AlGaAs Epitaxy", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940993; https://doi.org/10.1117/12.940993
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