22 April 1987 A High-Transconductance AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Fet With Pd-Buried Gate Structure
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941059
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
A high-transconductance AlGaAs/GaAs/AlGaAs selectively-doped double-heterojunction FET (SD-DH FET) with 1μm gate length has been fabricated by using high-quality epitaxial layer grown by MBE and Pd-buried gate structure. The double-heterojunction structure showed high sheet electron concentration of 2.5x10 12 /cm 2 and high electron mobility of 37000cm 2 /Vs at 77K. The sheet resistance at room temperature was 450 ohm/sq., which is about one half of that for a conventional high electron mobility transistor (HEMT). Systematic change of SD-DH FET characteristics with threshold voltage variation has been studied by gradually burying Pd into AlGaAs layer. It was found that transconductance of SD-DH FET monotonically increased for threshold voltage up to 0.1V, at which maximum extrinsic transconductance of 500mS/mm 7 was obtained. The estimated saturation velocity of electrons in SD-DH FET was 1.7 -2.0x10 7 cm/s, which is comparable to that of HEMT. The SD-DH FET has been shown to be superior to conventional HEMT fabricated at the same time in high current drivability, high transconductance and lower drain conductance.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Inoue, K. Inoue, K. Nishii, K. Nishii, K. Bando, K. Bando, A. Tezuka, A. Tezuka, T. Matsuno, T. Matsuno, T. Onuma, T. Onuma, } "A High-Transconductance AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Fet With Pd-Buried Gate Structure", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941059; https://doi.org/10.1117/12.941059
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