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22 April 1987 Beam-Lead Hybridization Technology For Focal Plane Infrared Detectors
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941052
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
A hybridization technology for focal plane infrared detectors was developed. It is based on the user-friendly Beam-Lead hybridization technique which is particularly well suited for work with infrared detectors, such as HgCdTe, which are sensitive to mechanical action during processing. This technology permits high connection density for linear mosaic arrays with beam leads 6 µm length and 14 µm pitch. The beam lead's ability to be bonded to aluminum permits its interface with conventional silicon circuits.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Ameurlaine, A. Gauthier, P. Langle, and A. Salaville "Beam-Lead Hybridization Technology For Focal Plane Infrared Detectors", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941052
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