22 April 1987 Buried-Channel Insulated Gate Fets On MOCVD Grown Inp/InGaAs/InP
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941062
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
A novel heterojunction FET employing a buried channel is presented. Insulated-gate FETs have been fabricated on MOCVD grown InP/In0.53 Ga0.47 As. Plasma-enhanced CVD was used for the gate insulator deposition. These devices showed transconductances up to 90 mS/mm, and improved drain-current stability as compared with InP MISFETs employing SiO2.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. A. Martin, E. A. Martin, K. P. Pande, K. P. Pande, M. A. diForte-Poisson, M. A. diForte-Poisson, C. Brylinski, C. Brylinski, G. Colomer, G. Colomer, M. Razeghi, M. Razeghi, } "Buried-Channel Insulated Gate Fets On MOCVD Grown Inp/InGaAs/InP", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941062; https://doi.org/10.1117/12.941062
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