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22 April 1987 Formation And Nondestructive Characterization Of Ion Implanted Soi Layers
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941028
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
High-temperature, oxygen ion implantation has been used to form buried oxide layers in silicon single crystals. The ion implantation and substrate variables, particularly the substrate temperature, were optimized to obtain silicon layers with appropriate microstructures near the surface. The as-implanted specimens were subsequently annealed at high temperatures to form buried Si02 layer with sharp interfaces and minimize dislocations in the top layers. These specimens were characterized by cross-section TEM and the results were compared with those obtained using spectroscopic ellipsometry (SE). We discuss the application of nondestructive SE technique in the characterization of silicon-on-insulator materials. Such techniques are absolutely essential for the fabrication of semiconductor devices.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Narayan, M. El Ghor, S. Y. Kim, K. Vedam, R. Manukonda, and S. J. Pennycook "Formation And Nondestructive Characterization Of Ion Implanted Soi Layers", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941028
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