22 April 1987 Implant Profiles In GaP, GaAs, InP, And InSb: Influence Of Furnace And Rapid Thermal Annealing
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941045
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Profiles measured using secondary ion mass spectrometry for random and channeled implants of column II, IV, and VI elements in GaP, GaAs, InP, and InSb are decsribed. Depths and influence of furnace and lamp annealing on these profiles are emphasized.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R . G. Wilson, R . G. Wilson, S. w. Novak, S. w. Novak, } "Implant Profiles In GaP, GaAs, InP, And InSb: Influence Of Furnace And Rapid Thermal Annealing", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941045; https://doi.org/10.1117/12.941045
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