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22 April 1987 Invited Paper Characterization Of Interfaces Formed By Interrupted OMVPE Growth
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987)
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Properties of GaAs and InGaAs/GaAs epitaxial interfaces formed by interrupted OMVPE regrowth are studied using C-V, I-V, DLTS, cross-sectional TEM and RBS techniques. Various types of anomalous depletion and accumulation carrier concentration profiles are observed at regrown interfaces prepared under various growth and processing conditions. Based on the detailed experiments, a new generalized model for regrown epitaxial interfaces is proposed and discussed which involves formation of gap state continuum as well as adsorption enhanced incorporation of shallow donor/acceptor impurity atoms. The introduction of gap state continuum is explained by the recently proposed disorder induced gap state (DIGS) model in which crystalline disorder within a few monolayers of the regrown interface region gives rise to state continuum, leading to the observed anomalous carrier profiles.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideki Hasegawa, Eiji Ikeda, and Hideo Ohno "Invited Paper Characterization Of Interfaces Formed By Interrupted OMVPE Growth", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987);

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