Invited Paper Grating Surface Emitting, Semiconductor Lasers

G. A. Evans; J. M. Hammer; N. W. Carlson

doi:10.1117/12.941048

22 April 1987 Invited Paper Grating Surface Emitting, Semiconductor Lasers

G. A. Evans, J. M. Hammer, N. W. Carlson

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941048
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Grating-surface-emitting diode lasers have the capability of producing a dynamically stable single-frequei cy output with angular beam divergences perpendicular to the grating lines of much less than 10. Because the emitting spot size of conventional edge emitting semiconductor lasers is very small, their beam divergences are very large: typically 70 parallel and 300 perpendicular to the p-n junction. In addition, the small optical spot size at the chip facet results in extremely high power densities (> 106 W/cm2) when driven to high power and ultimately causes catastrophic failure by melting the facet in AIGaAs lasers.

Citation Download Citation

G. A. Evans, J. M. Hammer, and N. W. Carlson "Invited Paper Grating Surface Emitting, Semiconductor Lasers", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941048

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