22 April 1987 Invited Paper Is SOI Ready For Circuits Applications?
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941024
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Silicon On Insulator technology is now reaching the point of actual application to a medium size circuit market. Three approaches have been extensively explored in order to obtain more or less defect-free SOI 4 in. wafers: zone melting recrystallization, formation and oxidation of porous-Si, and oxygen implantation. We review the advantages and drawbacks of these techniques and some electrical results obtained on circuits made on these SOI materials.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Bensahel, D. Bensahel, D. Dutartre, D. Dutartre, M. Haond, M. Haond, } "Invited Paper Is SOI Ready For Circuits Applications?", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941024; https://doi.org/10.1117/12.941024
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