22 April 1987 Invited Paper Is SOI Ready For Circuits Applications?
Author Affiliations +
Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941024
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Silicon On Insulator technology is now reaching the point of actual application to a medium size circuit market. Three approaches have been extensively explored in order to obtain more or less defect-free SOI 4 in. wafers: zone melting recrystallization, formation and oxidation of porous-Si, and oxygen implantation. We review the advantages and drawbacks of these techniques and some electrical results obtained on circuits made on these SOI materials.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Bensahel, D. Bensahel, D. Dutartre, D. Dutartre, M. Haond, M. Haond, "Invited Paper Is SOI Ready For Circuits Applications?", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941024; https://doi.org/10.1117/12.941024

Back to Top