22 April 1987 Invited Paper The Formation Of Shallow P+N Junctions Using RTA Of BF2+ And B+ Implanted Si
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941021
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The formation of shallow junctions by rapid thermal annealing of BF2+ or B+ ion-implanted Si wafers was studied. Substantial differences in the dopant activation and junction depths were observed between the different samples for high-dose implantation. Dual implantation of B+ and F+ into Si was done so that the influence of flourine on dopant behavior could be studied. Flourine was found to have a marked effect and a model is proposed to account for the observations. Also, comparison between rapid thermal and conventional furnace annealing of the various implanted samples is discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O . W. Holland, O . W. Holland, J. R. Alvis, J. R. Alvis, Cotton Hance, Cotton Hance, } "Invited Paper The Formation Of Shallow P+N Junctions Using RTA Of BF2+ And B+ Implanted Si", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941021; https://doi.org/10.1117/12.941021
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