22 April 1987 Vertical Sidewall Reactive Ion Etching (RIE) Of GaAs and AlxGa1_xAS (X=0.76) Using BC13/CC12F2/He At Equal Rates
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941032
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
A phenomenological study of Reactive Ion Etching (RIE) of GaAs and Al.Gal_xAS (x=0.76) using BC13/CC12F2/He has been carried out in order to obtain equal rates for etching the two semiconductors with vertical walls and smooth etched surfaces. The influences of 02 and H2, added purposely or inadvertently, the roles of added CC12F2 and He, and the effect of wafer size (loading effect) have been investigated on a limited basis. Equal etch rates, vertical (to tilde 1°) etched walls and smooth etched surfaces were attained for both GaAs and A1GaAs with and without a GaAs capping layer and with no special surface treatment of the wafers prior to etching in a commercially available RIE system used for the studies.
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Sayan D. Mukherjee, Sayan D. Mukherjee, } "Vertical Sidewall Reactive Ion Etching (RIE) Of GaAs and AlxGa1_xAS (X=0.76) Using BC13/CC12F2/He At Equal Rates", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941032; https://doi.org/10.1117/12.941032
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