14 October 1987 Optically Excited And Interrogated Micromechanical Silicon Cantilever Structure
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Proceedings Volume 0798, Fiber Optic Sensors II; (1987) https://doi.org/10.1117/12.941086
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Micromechanical silicon cantilever structures of typical dimensions 1 mm x 80 μm x 5 μm have been excited by absorption of pulsed light from diode laser at 790 nm or a LED at 830 nm respectively. The excitation motion of the cantilevers was measured by means of a fiber-optic Michelson interferometer as well as a reflective multimode fiber optic pick up. In addition to the optical signal the electrical signal of a thin film piezoresistive transducer localized at the base of the cantilever has been measured. The optimal fiber position with respect to the cantilever was determined experimentally. At this position a signal to noise ratio of about 6 could be realized for the detected signal at 5 kHz bandwidth for optical power levels of 56 pW. Using a 125 μm diameter optical fiber this corresponds to an optical power density of 4.6 mW/mm2 which is below the critical value of 5 mW/mm2 suggested for explosive environments.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Wolfelschneider, H. Wolfelschneider, R. Kist, R. Kist, G. Knoll, G. Knoll, S. Ramakrishnan, S. Ramakrishnan, H. Hofflin, H. Hofflin, w. Benecke, w. Benecke, L. Csepregi, L. Csepregi, A. Neuberger, A. Neuberger, H. Seidel, H. Seidel, } "Optically Excited And Interrogated Micromechanical Silicon Cantilever Structure", Proc. SPIE 0798, Fiber Optic Sensors II, (14 October 1987); doi: 10.1117/12.941086; https://doi.org/10.1117/12.941086


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