At 1.06 µm optoelectronic and optical bistability and a clear multistability due to a self-electrooptic-effect is observed in hybrid Si and InP SEED devices. The nonlinearity is traced back to thermal effects which are largely enhanced by the electrical power input. Novel photodetector and modulator devices with high sensitivity and threshold characteristics are found. For a Si-Schottky diode a quantitative comparison with the thermal model and first dynamical measurements of the switch up process are presented.
"Optoelectronic And Optical Bistability In Si And InP SEED Devices", Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941205; https://doi.org/10.1117/12.941205