22 September 1987 Optoelectronic And Optical Bistability In Si And InP SEED Devices
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Proceedings Volume 0800, Novel Optoelectronic Devices; (1987) https://doi.org/10.1117/12.941205
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
At 1.06 µm optoelectronic and optical bistability and a clear multistability due to a self-electrooptic-effect is observed in hybrid Si and InP SEED devices. The nonlinearity is traced back to thermal effects which are largely enhanced by the electrical power input. Novel photodetector and modulator devices with high sensitivity and threshold characteristics are found. For a Si-Schottky diode a quantitative comparison with the thermal model and first dynamical measurements of the switch up process are presented.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Franz Forsmann, Franz Forsmann, Dieter Jager, Dieter Jager, } "Optoelectronic And Optical Bistability In Si And InP SEED Devices", Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941205; https://doi.org/10.1117/12.941205
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